Feng Gao

Please welcome Feng Gao to NSLS. Feng earned his PhD degree in Electrical Engineering at the Illinois Institute of Technology in 2009. As a graduate appointee, he worked for Argonne National Laboratory’s High Energy Physics Division at Argonne Wakefield Accelerator from 2005 to 2008, on high-power RF and millimeter-wave generation and extraction using the wakefield effect of an intense electron beam. Since January 2009, he has been an intern as a Research Associate at Euclid Techlabs LLC. His research interests include dielectric-loaded accelerating structures, wakefield generation and extraction, RF and microwave simulation. Feng will be working as an RF engineer in the Accelerator and Operations Division, RF and Power Systems Group."