2002 NSLS Users' Meeting

In situ Studies of Materials Processing

Physics Department, Bldg. 510, Large Seminar Room

Wednesday, May 22, 2002

Organizers: Karl Ludwig, Boston University, 617-353-9346, Randy Headrick, Uni. of Vermont, 802-656-0048, and Chi-Chang Kao, NSLS, 631-344-4494

Advanced materials continue to be at the forefront of science and technology. In many cases, the formation of these materials requires increasingly sophisticated thin film growth techniques, surface modification regimens, or carefully controlled phase transformations. Important progress has often been made through heuristic approaches, or on the basis of information obtained from detailed post mortem analysis of materials that have undergone processing. However, in many cases, the realization of these approaches' full potential will require a more detailed understanding of the atomic-level processes occurring during processing. Synchrotron-based real-time x-ray studies offer the ability to examine the evolution of materials structure under a wide variety of processing conditions, either in a surface-sensitive or a bulk-sensitive mode, with microsecond resolution on length scales from 0.1-100 nm. This workshop will examine both current efforts utilizing synchrotron radiation for in-situ studies of materials processing, as well as promising areas where such applications are still developing, or have yet to develop. These include wide-bandgap, oxide and organic thin film growth, surface modification by sputtering/plasma processing and thin silicide film formation via solid phase epitaxy. A brief overview will also be given of ongoing efforts to construct an in-situ x-ray scattering facility at the NSLS for real-time studies of surface processing.

9:00 a.m. Randy Headrick, Uni. of Vermont, "Overview of in situ Studies of Materials Processing
9:25 a.m. Christian Lavoie, IBM, "Effects of Alloying Elements on Cobalt Silicide Formation"
10:00 a.m. Kit Umbach, Cornell, "Ion-induced Ripples On SiO2"
10:35 a.m. Coffee Break
10:50 a.m. George Malliaras, Cornell, "Orientation of Pentacene Films Using Surface Alignment Layers and Its Influence on Thin Film Transistor Characteristics"
11:25 a.m. Paul Lyman, University Wisconsin, Milwaukee, "Direct Methods in Surface Crystallography"
12:00 noon Lunch
1:00 p.m. R. D. Vispute, University of Maryland, "Pulsed Laser Deposition of Oxides and Nitrides: Issues of Growth and Interfaces for Electronic Devices"
1:35 p.m. Ted Moustakas, Boston University, "Growth of III-Nitrides by Molecular Beam Epitaxy"
2:10 p.m. Charles Eddy, Naval Research Lab., "The Importance of Understanding Plasma/Surface Interactions in Semiconductor Processing"