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Workshop 9

"Applications of Synchrotron Based Methods to Microelectronics Materials"

Date: Wednesday, May 23, 2007

Organizer(s):
Jean Jordan-Sweet (IBM Research Division) jlj@bnl.gov
Christian Lavoie (IBM Research Division) clavoi@us.ibm.com

Location: Bldg. 488, Berkner Hall, Conf Room B

Description:
The goal of this workshop is to familiarize researchers in the field of microelectronics with the power of synchrotron methods for materials characterization. It also will broaden the horizons of both occasional and frequent “users” to the wide variety of techniques that can be applied to microelectronics materials research. Opportunities run the gamut from technology development to long-term academically-oriented studies. Leading experts will present overviews and applications of methods including EXAFS, high-resolution XRD, microdiffraction, texture measurements, and time-resolved XRD. Recent results impacting many technologies will be covered, including metal silicides, dielectrics, strained SiGe and Si, and phase-change materials. Part of the program will consist of a joint session with the "Workshop on Making and Using Nanobeams." Some time will be set aside at the end to discuss current and future instrumentation needs.

Agenda
9:00 a.m. - 9:10 a.m. Welcome
9:10 a.m. - 9:50 a.m. Simone Raoux, IBM Almaden Research Center, San Jose, CA
“Time-resolved X-ray Diffraction Studies of Phase Change Materials”
9:50 a.m. - 10:30 a.m. Joseph Woicik, National Institute of Standards and Technology (NIST), Gaithersburg, MD
“Ferroelectric Distortion in Coherently Strained SrTiO3 Thin Films on Si(001): Experiment and First-Principles Theory”
10:30 a.m. - 10:50 a.m. Break
10:50 a.m. - 11:30 a.m. Christophe Detavernier, Universiteit Gent, Gent, Belgium
“Using Synchrotron Radiation to Characterize the Texture of Thin Silicide Films”
11:30 a.m. - 12:10 p.m. Jorge A. Kittl, Texas Instruments assignee at IMEC, Leuven, Belgium
“In-situ XRD Studies of Ni Silicide Phase Formation for Fully Silicided (FUSI) Gate Applications”
12:10 p.m. - 1:10 p.m. Lunch
  Note: First afternoon session is a joint session with Workshop 8, "Making and Using Nanobeams"
1:10 p.m. - 1:50 p.m. Wenbing Yun, Xradia Inc., Concord, CA |
“Applications of X-ray Tomography to IC Applications”
1:50 p.m. - 2:30 p.m. Conal E. Murray, IBM T.J. Watson Research Center, Yorktown Heights, NY
“The Mechanics of Strained-Si Microelectronics as Revealed by Microbeam X-ray Diffraction”
2:30 p.m. - 3:10 p.m. Tonio Buonassisi, Massachusetts Institute of Technology, Cambridge, MA, and Evergreen Solar, Inc., Marlborough, MA
“Impact of Transition-metal Nanodefects on Silicon Solar Cells Investigated by Synchrotron Microprobe Techniques”
3:10 p.m. - 3:30 p.m. Break
3:30 p.m. - 4:10 p.m. Patrick Lysaght, SEMATECH, Austin, TX
“Characterizing Advanced CMOS Thin Film Systems via Synchrotron XPS, XAS, and EXAFS”
4:10 p.m. - 4:50 p.m. Martin L. Green, National Institute of Standards and Technology (NIST), Gaithersburg, MD
“GISAXS and X-Ray Reflectivity Used to Study the Nucleation, Growth and Morphology of ALD HfO2 High-k Gate Dielectric Layers”
4:50 p.m. - 520 p.m. Discussion on Future Needs for Microelectronics Research Synchrotron Tools, and Closure